EL817- PHOTO TRANSISTOR-EE426-P6

The EL817series of devices each consist of infrared emitting diodes, optically coupled to a phototransistor detector.

Features

• Current transfer ratio: (CTR: 50~600% at IF = 5mA, VCE = 5V)
• High isolation voltage between input and output (Viso = 5000Vrms)
• Creep age distance > 7.62mm
• Operating temperature up to +110°C
• The product itself will remain within RoHS compliant version

Applications

• Low power logic circuits
• Tele communications equipment
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances
• Programmable controllers
• System appliances, measuring instruments